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Abstract
Calculational analysis of different scattering mechanisms of two-dimensional electron gas in AlGaN/(AlN)/GaN and InAlN/(AlN)/GaN high-electron mobility transistors was carried out. It was found that the mobility of AlGaN-based structures at room temperature is mainly limited by inherent scattering mechanisms (namely, optical and acoustic phonon scattering), while the mobility in our InAlN-based structures is limited by the interface roughness scattering. The low-temperature mobility is found to be limited by the interface roughness scattering for both AlGaN- and InAlN-based structures.
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Details
1 Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia
2 Submicron Heterostructures for Microelectronics, Research & Engineering Center, RAS, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia