Abstract

Present work reports the results of activities intended to reach thin Si(Li) detector entrance window on the diffusive lithium layer side. It was established that the new n-contact represented by a heterostructure of unalloyed amorphous n-type silicon a-Si:H allows one to achieve the entrance window thickness 3 – 4 orders of magnitude smaller than the lithium-side entrance window of standard Si(Li) detectors. The films of amorphous silicon were synthesized with MASD (magnetron assisted silane decomposition) method in mixture of SiH4 (25%) and Ar (75%) gases. Lithium layer surface resistivity and silicon target type (n- or p-) affection on electrical properties of Si(Li) detector contact produced were studied. The investigation performed had led to a technology of Si(Li) detector production with thickness of the entrance window on the diffusive lithium layer side below 0.1 µm.

Details

Title
Si(Li) detector with ultra-thin entrance window on the diffusive lithium side
Author
Bazlov, N V 1 ; Derbin, A V 2 ; Drachnev, I S 2 ; Gicharevich, G E 2 ; Kotina, I M 2 ; Konkov, O I 3 ; Pilipenko, N V 2 ; Chmel, E A 2 ; Abolmasov, S N 4 ; Terukov, E I 3 ; Unzhakov, E V 1 

1  Saint-Peterburg State University, St. Petersburg, Russia 
2  NRC “Kurchatov Institute” - PNPI, Gatchina, Russia 
3  Ioffe Physical-Technical Institute of the Russian Academy of Sciences, St. Petersburg, Russia 
4  “NTC TPT” ltd., St. Petersburg, Russia 
Publication year
2019
Publication date
Nov 2019
Publisher
IOP Publishing
ISSN
17426588
e-ISSN
17426596
Source type
Scholarly Journal
Language of publication
English
DOI
https://doi.org/10.1088/1742-6596/1400/5/055056
ProQuest document ID
2568282810
Copyright
© 2019. This work is published under http://creativecommons.org/licenses/by/3.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.