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Abstract
A model is developed to depict the formation of InP/GaxIn1-xP axial heterostructures in self-catalyzed GaxIn1-xP nanowires. The composition profiles of the InP/GaxIn1-xP axial heterostructure are calculated taking into account elastic stresses. It is shown that the InP/GaxIn1-xP axial heterojunction width at the growth temperature of 450°C is larger than 12 monolayers for nanowires with the radius larger than 10 nm. Also, the comparison with GaxIn1-xAs system is performed and reveals that the InP/GaxIn1-xP axial heterojunction width is approximately two times smaller than the InAs/GaxIn1-xAs axial heterojunction width.
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Details
1 St. Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg 194021, Russia; ITMO University, St. Petersburg 197101, Russia
2 Solid State Physics and NanoLund, Lund University, Box 118, S-22100 Lund, Sweden; ITMO University, St. Petersburg 197101, Russia
3 ITMO University, St. Petersburg 197101, Russia