Abstract

Investigation of ZnO thin films synthesis using RF magnetron sputtering deposition in the Ar/O2 plasma gas mixture at different O2 composition and at different growth temperatures is presented. The effect growth process on structural (morphology and orientation films, grain sizes, lattice parameters) and optical (transmittance, absorption, refractive index, photoluminescence) properties are examined. It is shown that synthesized ZnO thin films at a temperature from 200 to 300 °C are polycrystal and textured. Notice that ZnO thin films, which are synthesized using pure Ar plasma gas, are porosity. The optical transmittance and absorption spectra have an absorption edge near 380 nm. The PL spectra of synthesized ZnO films show exciton peaks at 370-400 nm and the wide emission at the yellow and red spectral regions.

Details

Title
ZnO thin films synthesis by RF magnetron sputtering deposition
Author
VO Gridchin 1 ; Kotlyar, K P 1 ; Vershinin, A V 1 ; Kryzhanovskaya, N V 1 ; Pirogov, E V 1 ; Semenov, A A 2 ; Belyavskiy, P Y 2 ; Nashchekin, A V 3 ; GE Cirlin 4 ; Soshnikov, I P 5 

 St. Petersburg Academic University, St. Petersburg 194021, Russia 
 St. Petersburg Electrotechnical University, St. Petersburg 197376, Russia 
 Ioffe Physical Technical Institute RAS, St. Petersburg 194021, Russia 
 ITMO University, St. Petersburg 197101, Russia 
 St. Petersburg Academic University, St. Petersburg 194021, Russia; Ioffe Physical Technical Institute RAS, St. Petersburg 194021, Russia 
Publication year
2019
Publication date
Dec 2019
Publisher
IOP Publishing
ISSN
17426588
e-ISSN
17426596
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2568316323
Copyright
© 2019. This work is published under http://creativecommons.org/licenses/by/3.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.