Abstract

Highly charged ions (HCIs) are an efficient tool for the perforation of suspended 2D materials. Only a fraction of their potential energy is transferred to the atomically thin target during the very short interaction time and is available for pore formation. Charge exchange spectra were measured for highly charged xenon ions transmitted through suspended, single layer MoS2 in order to determine the deposited potential energy available for pore formation. Additionally, charge exchange dependent ion stopping responsible for kinetic sputtering was measured simultaneously.

Details

Title
Energy deposition of highly charged ions transmitted through single layer MoS2
Author
Creutzburg, S 1 ; Schwestka, J 2 ; Inani, H 3 ; Tripathi, M K 3 ; Grande, P L 4 ; Heller, R 5 ; Klingner, N 5 ; Niggas, A 2 ; Kozubek, R 6 ; Madauß, L 6 ; Facsko, S 5 ; Kotakoski, J 3 ; Schleberger, M 6 ; Aumayr, F 2 ; Wilhelm, R A 7 

 Helmholtz-Zentrum Dresden-Rossendorf, Ion Beam Center, Dresden, Germany; Technische Universität Dresden, Dresden, Germany 
 TU Wien, Institute of Applied Physics, Vienna, Austria 
 University of Vienna, Faculty of Physics, Vienna, Austria 
 Federal University of Rio Grande do Sul, Ion Implantation Laboratory, Porto Alegre, Brasil 
 Helmholtz-Zentrum Dresden-Rossendorf, Ion Beam Center, Dresden, Germany 
 University Duisburg-Essen, Faculty of Physics and CENIDE, Duisburg, Germany 
 Helmholtz-Zentrum Dresden-Rossendorf, Ion Beam Center, Dresden, Germany; TU Wien, Institute of Applied Physics, Vienna, Austria 
Publication year
2020
Publication date
Jan 2020
Publisher
IOP Publishing
ISSN
17426588
e-ISSN
17426596
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2568333296
Copyright
© 2020. This work is published under http://creativecommons.org/licenses/by/3.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.