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Abstract
Ferroelectricity, the electrostatic counterpart to ferromagnetism, has long been thought to be incompatible with metallicity due to screening of electric dipoles and external electric fields by itinerant charges. Recent measurements, however, demonstrated signatures of ferroelectric switching in the electrical conductance of bilayers and trilayers of WTe2, a semimetallic transition metal dichalcogenide with broken inversion symmetry. An especially promising aspect of this system is that the density of electrons and holes can be continuously tuned by an external gate voltage. This degree of freedom enables measurement of the spontaneous polarization as free carriers are added to the system. Here we employ capacitive sensing in dual-gated mesoscopic devices of bilayer WTe2 to directly measure the spontaneous polarization in the metallic state and quantify the effect of free carriers on the polarization in the conduction and valence bands, separately. We compare our results to a low-energy model for the electronic bands and identify the layer-polarized states that contribute to transport and polarization simultaneously. Bilayer WTe2 is thus shown to be a fully tunable ferroelectric metal and an ideal platform for exploring polar ordering, ferroelectric transitions, and applications in the presence of free carriers.
Free carriers and electrical polarization coexist in ferroelectric metals. Here, the authors use a capacitive method to probe the electronic compressibility of free carriers in a tunable semimetal, extract the polarized contribution, and study the carrier dependence of the ferroelectric state.
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1 Carnegie Mellon University, Department of Physics, Pittsburgh, USA (GRID:grid.147455.6) (ISNI:0000 0001 2097 0344)
2 Carnegie Mellon University, Department of Physics, Pittsburgh, USA (GRID:grid.147455.6) (ISNI:0000 0001 2097 0344); Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, International Center for Quantum Design of Functional Materials (ICQD), Hefei, China (GRID:grid.59053.3a) (ISNI:0000000121679639)
3 Oak Ridge National Laboratory, Materials Science and Technology Division, Oak Ridge, USA (GRID:grid.135519.a) (ISNI:0000 0004 0446 2659)
4 Oak Ridge National Laboratory, Materials Science and Technology Division, Oak Ridge, USA (GRID:grid.135519.a) (ISNI:0000 0004 0446 2659); University of Tennessee, Department of Materials Science and Engineering, Knoxville, USA (GRID:grid.411461.7) (ISNI:0000 0001 2315 1184); University of Tennessee, Department of Physics and Astronomy, Knoxville, USA (GRID:grid.411461.7) (ISNI:0000 0001 2315 1184)
5 Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, International Center for Quantum Design of Functional Materials (ICQD), Hefei, China (GRID:grid.59053.3a) (ISNI:0000000121679639)