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Abstract
Optical absorption of s- and p-polarized light was studied in GaN/AlN quantum wells in the near-infrared spectral range. An absorption peak associated with intersubband electron transitions in quantum wells was observed near a wavelength of 1.55 μm. Optoelectronic devices based on these structures can be used in fiber-optic telecommunication technologies.
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Details
1 Peter the Great St. Petersburg Polytechnic University, 29 Polytechnicheskaya, St. Petersburg, 195251, Russia
2 Ioffe Institute, 26 Politekhnicheskaya, St. Petersburg, 194021, Russia