It appears you don't have support to open PDFs in this web browser. To view this file, Open with your PDF reader
Abstract
The properties of thin carbon films obtained by the deposition of carbon in CH4 - plasma on the surface of various substrates (Si, SiO2 and quartz glass) and subsequent annealing at 650 to 800 °C were investigated. The sizes of graphene domains from 5 to 15 nm from Raman spectra were determined which increases with rising temperature on synthesis of carbon films. Also, sizes of graphene domains were estimated based on the electrical conductivities of obtained carbon films, and their values were equal ∼10.8 nm. The Efros-Shklovskii variable-range hopping (ES-VRH) conduction mechanism is replaced by percolation conductivity with increasing temperature from 650 to 800° C. When using Si substrates, the hopping mechanism was not observed at all temperatures.
You have requested "on-the-fly" machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Show full disclaimer
Neither ProQuest nor its licensors make any representations or warranties with respect to the translations. The translations are automatically generated "AS IS" and "AS AVAILABLE" and are not retained in our systems. PROQUEST AND ITS LICENSORS SPECIFICALLY DISCLAIM ANY AND ALL EXPRESS OR IMPLIED WARRANTIES, INCLUDING WITHOUT LIMITATION, ANY WARRANTIES FOR AVAILABILITY, ACCURACY, TIMELINESS, COMPLETENESS, NON-INFRINGMENT, MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE. Your use of the translations is subject to all use restrictions contained in your Electronic Products License Agreement and by using the translation functionality you agree to forgo any and all claims against ProQuest or its licensors for your use of the translation functionality and any output derived there from. Hide full disclaimer
Details
1 M Ammosov North-Eastern Federal University, Yakutsk, Republic of Sakha, Russia