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Abstract
In this paper, Insulated Gate Bipolar Transistor (IGBT), which is the most widely used full-control power electronic device, is taken as the research object. Under the special working mode of short-time intermittent pulse, with the increase of conduction current, the chip junction temperature of high-power IGBT will rise sharply and fluctuate greatly, causing the operating characteristics of the device to be greatly affected by temperature. The commonly used method of measuring the bottom plate shell temperature with thermocouples and then estimating the steady junction temperature can no longer meet the demand. Firstly, the fluctuation characteristics of junction temperature of high-power IGBT are analyzed. Then, a high-speed infrared thermal imaging device is used to carry out real-time junction temperature detection. The distribution and rising process of instantaneous junction temperature on the chip surface are obtained, which further verifies the correctness of theoretical analysis. The research has important guiding significance for IGBT application design under short-time intermittent pulse operation mode, and also has certain reference value for general operation mode.
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Details
1 College of Mechanical and Electronic Engineering, Wuhan Donghu University, Wuhan 430000, Hubei Province, China.