Abstract

Experimental and simulation results are presented and discussed on electron-beam lithography (EBL) nano-structuring using the positive chemically semi-amplified electron-beam resist AR-P 6200 (CSAR 62), which provides high sensitivity and allows achievement of high resolutions (sub-100 nm). The influence of the e-beam lithography process parameters, namely, exposure dose, development process conditions, and proximity effects on the obtained developed images was studied for the case of 40-keV electron energy.

Details

Title
Experimental and theoretical study on chemically semi-amplified resist AR-P 6200
Author
Kostic, I 1 ; Vutova, K 2 ; Andok, R 1 ; Barak, V 1 ; Bencurova, A 1 ; Ritomsky, R 1 ; Tanaka, T 3 

 Institute of Informatics, Slovak Academy of Sciences, 9 Dubravska cesta, 84507 Bratislava, Slovakia 
 E. Djakov Institute of Electronics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia, Bulgaria; Visiting Professor, Hiroshima University, Higashihiroshima, Japan 
 Hiroshima Institute of Technology, 2-1-1, Miyake, Saeki-ku, Hiroshima 731-5193, Japan; Visiting Professor, Hiroshima University, Higashihiroshima, Japan 
Publication year
2018
Publication date
Mar 2018
Publisher
IOP Publishing
ISSN
17426588
e-ISSN
17426596
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2572125902
Copyright
© 2018. This work is published under http://creativecommons.org/licenses/by/3.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.