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Abstract
Experimental and simulation results are presented and discussed on electron-beam lithography (EBL) nano-structuring using the positive chemically semi-amplified electron-beam resist AR-P 6200 (CSAR 62), which provides high sensitivity and allows achievement of high resolutions (sub-100 nm). The influence of the e-beam lithography process parameters, namely, exposure dose, development process conditions, and proximity effects on the obtained developed images was studied for the case of 40-keV electron energy.
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Details
1 Institute of Informatics, Slovak Academy of Sciences, 9 Dubravska cesta, 84507 Bratislava, Slovakia
2 E. Djakov Institute of Electronics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia, Bulgaria; Visiting Professor, Hiroshima University, Higashihiroshima, Japan
3 Hiroshima Institute of Technology, 2-1-1, Miyake, Saeki-ku, Hiroshima 731-5193, Japan; Visiting Professor, Hiroshima University, Higashihiroshima, Japan