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Abstract
High-temperature annealing of GaAs(111)A and GaAs(111)B substrates under Langmuir evaporation conditions was studied using Monte Carlo simulation. The maximal value of the congruent evaporation temperature was estimated. The congruent evaporation temperature was demonstrated to be dependent on the surface orientation and concentration of surface defects.
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1 Rzhanov Institute of Semiconductor Physics, 630090, Novosibirsk, Russia; Novosibirsk State Technical University, 630073, Novosibirsk, Russia
2 Rzhanov Institute of Semiconductor Physics, 630090, Novosibirsk, Russia