Abstract

GaAs thermal smoothing at temperatures T ≤ 650°C in the conditions close to equilibrium yields surfaces with atomically smooth terraces separated by steps of monatomic height. At higher temperatures T ≥ 700°C, surface smoothing is changed to roughening. In the present paper, possible reasons of surface roughening at elevated temperatures are studied by means of Monte Carlo simulation and compared with the experimental results on GaAs. It is proved that the thermodynamic roughening transition, which consists in spontaneous generation of atomic steps due to decrease in the step line tension down to zero, cannot explain the experiment because it should occur at temperatures T ∼ 1800 - 2000°C, i.e. much higher than in the experiment. Kinetic instabilities caused by deviations from equilibrium towards growth or sublimation are shown to cause GaAs roughening at elevated temperatures. The microscopic mechanisms of kinetic-driven roughening are discussed.

Details

Title
Thermodynamic and kinetic roughening: Monte Carlo simulation and experiment on GaAs
Author
Kazantsev, D M 1 ; Akhundov, I O 1 ; Kozhukhov, A S 2 ; Alperovich, V L 1 

 Rzhanov Institute of Semiconductor Physics, 630090 Novosibirsk, Russia; Novosibirsk State University, 630090 Novosibirsk, Russia 
 Rzhanov Institute of Semiconductor Physics, 630090 Novosibirsk, Russia 
Publication year
2017
Publication date
Mar 2017
Publisher
IOP Publishing
ISSN
17426588
e-ISSN
17426596
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2573875384
Copyright
© 2017. This work is published under http://creativecommons.org/licenses/by/3.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.