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Abstract
We have experimentally studied the photoluminescence from InGaAsSb/AlGaAsSb quantum wells of different width under different levels of interband optical pumping. The dependences of photoluminescence intensity at spectral maxima on carrier concentration were theoretically calculated. This dependence was received using the rate equation taking into account the role of radiative and nonradiative recombination. Comparison of the theoretical and experimental results allowed to determine the nonequilibrium carrier concentration in quantum wells at certain experimental conditions.
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1 Peter the Great St. Petersburg Polytechnic University, 29 Polytechnicheskaya str., St. Petersburg 195251, Russia
2 Department of Electrical and Computer Engineering, State University of New York at Stony Brook, New York, 11794 USA