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Abstract
Adaptive behavior of resistive state in response to electrical stimulation has been studied for the silicon oxide based memristive nanostructures subjected to electroforming in the conditions of current compliance. The limitation of current and temperature during electroforming affects the parameters of growing conductive filaments and reduction-oxidation reactions resulting in a higher dynamic range of gradual resistance change important for neuromorphic applications.
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1 Lobachevsky University, 23/3 Gagarin prospect, Nizhny Novgorod, 603950, Russia