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Abstract
A new lattice Monte Carlo model of AIIIBV nanowire growth according to the vapor- liquid-solid mechanism is suggested. The peculiarities of this model and the procedure of energy parameters estimation for the InAs system are described. The characteristics of InAs and GaAs self-catalyzed nanowire growth are obtained using the suggested model. A comparison of InAs and GaAs self-catalyzed nanowire growth characteristics using the suggested Monte Carlo model is performed
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1 Rzhanov Institute of Semiconductor Physics, 630090 Novosibirsk, Russia; Novosibirsk State Technical University, 630073 Novosibirsk, Russia