Abstract

Bragg reflectors consisting of the sequence of dielectric layers are considered to create p-n junction solar cells (SC) with improved efficiency in the longwave spectral range. Bragg mirrors (BM) based on porous silicon (PS) mutilayers at the backside of single crystalline and multicrystalline silicon wafer were formed by electrochemically etching. Maximal experimental reflectivity for BM on multicrystalline substrate achieves 62% due to the natural crystallites disorientation of multicrystalline substrate, whereas for single crystalline silicon the reflectivity in maximum is 87%. BM was formed also on rear side of multicrystalline silicon wafer with p-n junction.

Details

Title
Porous silicon Bragg reflectors on multi-crystalline silicon wafer with p-n junction
Author
Ivanov, I I 1 ; Skryshevsky, V A 1 ; Kyslovets, O S 1 ; Nychyporuk, T 2 ; Lemiti, M 2 

 Institute of High Technologies, Taras Shevchenko National University of Kyiv, 64 Volodymyrska street, Kyiv, 01601, Ukraine 
 Institut des Nanotechnologies de Lyon, UMR CNRS 5270, Université de Lyon, INSA Lyon, Bct. Blaise Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex, France 
Publication year
2016
Publication date
Apr 2016
Publisher
IOP Publishing
ISSN
17426588
e-ISSN
17426596
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2575098731
Copyright
© 2016. This work is published under http://creativecommons.org/licenses/by/3.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.