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Abstract
We propose a model for operation of mode-locked (ML) quantum-well semiconductor laser consisting of a reverse biased saturable absorber and a forward biased amplifying section. To describe the dynamics of this laser we use the traveling wave model. Numerical simulations performed for the InGaAs/InGaAlAs laser structure emitting at 1,55 um.
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1 Peter the Great St. Petersburg Polytechnic University, Saint Petersburg 195251, Russia
2 ITMO University, Saint Petersburg 197101, Russia