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Abstract
Spectra of the mid-infrared interband luminescence under interband optical pumping and impact ionization in strong electric fields are experimentally studied in the InAsSb epilayer and in the monocrystalline InSb in the temperature range from 10 K to 85 K. The recombination radiation anisotropy in InSb arising due to electron heating and drift in strong electric fields is observed.
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Details
1 Peter the Great St. Petersburg Polytechnic University, St. Petersburg, Russia
2 Ioffe Physical Technical Institute, St. Petersburg, Russia
3 State University of New York at Stony Brook, New York, USA