It appears you don't have support to open PDFs in this web browser. To view this file, Open with your PDF reader
Abstract
The lattice and electronic structure of beryllium doped zinc oxide (BexZn1-xO) ternary mixed crystal are studied by the first-principle calculations within the framework of the density functional theory (DFT). It turned out that the lattice parameter a and lattice parameter c decrease linearly as Be doping concentration increases, compliance with Vegard's law, the lattice parameters of the BexZn1-xO ternary mixed crystal are consistent with experimental results. Band gap increases with increasing Be content, and the band gap values are corrected. As Be doping, Zn 4s states dominate the conduction band and the conduction band bottom position constantly moving to higher energy region. Density of states strength Zn 4s states with decreasing proportion of Zn is constantly reduced, make the band gap width of BexZn1-xO increases.
You have requested "on-the-fly" machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Show full disclaimer
Neither ProQuest nor its licensors make any representations or warranties with respect to the translations. The translations are automatically generated "AS IS" and "AS AVAILABLE" and are not retained in our systems. PROQUEST AND ITS LICENSORS SPECIFICALLY DISCLAIM ANY AND ALL EXPRESS OR IMPLIED WARRANTIES, INCLUDING WITHOUT LIMITATION, ANY WARRANTIES FOR AVAILABILITY, ACCURACY, TIMELINESS, COMPLETENESS, NON-INFRINGMENT, MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE. Your use of the translations is subject to all use restrictions contained in your Electronic Products License Agreement and by using the translation functionality you agree to forgo any and all claims against ProQuest or its licensors for your use of the translation functionality and any output derived there from. Hide full disclaimer
Details
1 Department of Physics, School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, People's Republic of China