Abstract

We present a theoretical study of modulation doping of active region in the quantum dot (QD) laser and corresponding issues of QD charge neutrality violation, a band diagram of the laser and charge carriers distribution in the structure. Modulation doping is discussed as a possible technique to control laser output characteristics. It was shown that modulation doping leads to an increase of threshold current of lasing through excited QD optical transition together with power emission from QD ground state.

Details

Title
Modulation doping of quantum dot laser active area and its impact on lasing performance
Author
Konoplev, S S 1 ; Savelyev, A V 1 ; Korenev, V V 1 ; Maximov, M V 1 ; Zhukov, A E 1 

 St Petersburg Academic University, St. Petersburg, 194021 Russia 
Publication year
2015
Publication date
Nov 2015
Publisher
IOP Publishing
ISSN
17426588
e-ISSN
17426596
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2576461055
Copyright
© 2015. This work is published under http://creativecommons.org/licenses/by/3.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.