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Abstract
Mixed-type [a+c] dislocations can be identified in atomic-resolution high-angle annular dark-field scanning transmission electron microscope images of GaN viewed along [0001] by use of a Burgers loop analysis and by observation of the depth-dependent displacements associated with the Eshelby twist. These dislocations are found to be able to dissociate resulting in a fault that lies perpendicular to the dislocation glide plane. Consideration of the bonding that occurs in such a fault allows the dissociation reaction to be proposed, and the proposed fault agrees with the experimental images when kinks are incorporated into the model.
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Details
1 Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
2 Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK
3 Department of Materials, Imperial College London, Exhibition Road, London, SW7 2AZ, UK
4 JEOL Ltd., EM Application Group, 1-2 Musashino 3-Chome, Akishima, 196-8558, Tokyo, Japan