Abstract

We investigated bulk and thin-film samples of the quaternary p-type semiconductor Cu2ZnSnS4 (CZTS) by μSR, in order to characterize the existing muonium signals. We find that the majority of the implanted muons form a diamagnetic state broadened by an interaction with the Cu nuclear moments, which we interpret as Mu+ bound to sulphur. A paramagnetic fraction is also present at low temperatures and the ratio between the two muon charge states, Mu+ and Mu0, varies between 20 and 40% prior to the onset of muon diffusion, which occurs at around 150 K. The fraction of Mu0 is found to be sensitive to the defect content of the sample. The paramagnetic fraction has two different contributions and their origin is discussed and related with the muon role as a probe for charge carriers in the material.

Details

Title
Muonium states in Cu2ZnSnS4 solar cell material
Author
Alberto, H V 1 ; Vilão, R C 1 ; Gil, J M 1 ; Duarte, J Piroto 1 ; Vieira, R B L 1 ; Weidinger, A 1 ; Leitão, J P 2 ; da Cunha, A F 2 ; Sousa, M G 2 ; Teixeira, J P 2 ; Fernandes, P A 2 ; Salomé, P M P 3 ; Timmo, K 4 ; Loorits, M 4 ; Amato, A 5 ; Luetkens, H 5 ; Prokscha, T 5 ; Suter, A 5 ; Salman, Z 5 

 CEMDRX, Department of Physics, University of Coimbra, R. Larga, P-3004-516 Coimbra, Portugal 
 I3N and Department of Physics, University of Aveiro, Aveiro, Portugal 
 International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal 
 Department of Materials Science, Tallinn University of Technology, Ehitajatetee 5, Tallinn 19086, Estonia 
 Laboratory for Muon Spin Spectroscopy, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland 
Publication year
2014
Publication date
Dec 2014
Publisher
IOP Publishing
ISSN
17426588
e-ISSN
17426596
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2576756306
Copyright
© 2014. This work is published under http://creativecommons.org/licenses/by/3.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.