Abstract

Indium sulfide (In2S3) is a wide bandgap semiconductor, which is widely used as a window/buffer layer in thin film solar cell applications. In2S3 thin films were deposited using thermal evaporation technique and were annealed in sulfur ambient at 200 °C and 250 °C. Further, these films were treated in inductively coupled argon plasma sputtering with an average argon ion energy of 75 eV for 30 s. The paper presents the effect of Ar-plasma treatment on structure, elemental composition, morphology and topography of In2S3 films and the results were reported. Further, the optimized In2S3 layers were continued for plasma etching process with an average argon ion energy of 25 eV to study the effect of plasma etching duration on the growth of metallic indium nanoparticles over the film surface and the results were discussed in detail.

Details

Title
Annealing and plasma treatment effect on structural, morphological and topographical properties of evaporated β-In2S3 films
Author
Rasool, S 1   VIAFID ORCID Logo  ; Saritha, K 1   VIAFID ORCID Logo  ; Ramakrishna Reddy, K T 1 ; Tivanov, M S 2 ; Gremenok, V F 3 ; Zimin, S P 4 ; Pipkova, A S 4 ; Mazaletskiy, L A 4 ; Amirov, I I 5 

1  Solar Photovoltaic laboratory, Department of Physics, Sri Venkateswara University, Tirupati—517 502, Andhra Pradesh, India 
2  Faculty of Physics, Belarusian State University, Nezavisimosti 4 av., 220030, Minsk, Belarus 
3  Scientific and Practical Materials Research Centre, National Academy of Sciences, 220072, Minsk, Belarus 
4  Microelectronics and General Physics Department, Yaroslavl State University, 150003, Yaroslavl, Russia 
5  Yaroslavl Branch of the Institute of Physics and Technology of Russian Academy of Sciences, 150007, Yaroslavl, Russia 
Publication year
2020
Publication date
Jan 2020
Publisher
IOP Publishing
e-ISSN
20531591
Source type
Scholarly Journal
Language of publication
English
DOI
https://doi.org/10.1088/2053-1591/ab6a5b
ProQuest document ID
2583409403
Copyright
© 2020. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.