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Abstract
The thick N-B co-doped epilayers were grown by the fast sublimation growth method and the depth-resolved carrier lifetimes have been investigated by means of the free-carrier absorption (FCA) decay under perpendicular probe-pump measurement geometry. In some samples, we optically reveal in-grown carbon inclusions and polycrystalline defects of substantial concentration and show that these defects slow down excess carrier lifetime and prevent donor-acceptor pair photo luminescence (DAP PL). A pronounced electron lifetime reduction when injection level approaches the doping level was observed. It is caused by diffusion driven non-radiative recombination. However, the influence of surface recombination is small and insignificant at 300 K.
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Details
1 Institute of Applied Research, Vilnius University, Sauletekio av. 10, Vilnius, 10223 Lithuania
2 Department of Physics, Chemistry and Biology, Linköping University, Linköping, 58183 Sweden
3 Faculty of Science and Technology, Meijo University, Tempaku-ku, Nagoya, 468-8502 Japan
4 School of Information and Communication Technology, Royal Institute of Technology, Kista-Stockholm, 58183 Sweden
5 Department of Materials Science – Materials for Electronics and Energy Technology, University of Erlangen-Nuremberg, Erlangen, 91058 Germany