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Abstract
Van der Waals magnets have emerged as a fertile ground for the exploration of highly tunable spin physics and spin-related technology. Two-dimensional (2D) magnons in van der Waals magnets are collective excitation of spins under strong confinement. Although considerable progress has been made in understanding 2D magnons, a crucial magnon device called the van der Waals magnon valve, in which the magnon signal can be completely and repeatedly turned on and off electrically, has yet to be realized. Here we demonstrate such magnon valves based on van der Waals antiferromagnetic insulator MnPS3. By applying DC electric current through the gate electrode, we show that the second harmonic thermal magnon (SHM) signal can be tuned from positive to negative. The guaranteed zero crossing during this tuning demonstrates a complete blocking of SHM transmission, arising from the nonlinear gate dependence of the non-equilibrium magnon density in the 2D spin channel. Using the switchable magnon valves we demonstrate a magnon-based inverter. These results illustrate the potential of van der Waals anti-ferromagnets for studying highly tunable spin-wave physics and for application in magnon-base circuitry in future information technology.
A major challenge in magnon based approaches to information processing lies in developing valves to allow or supress the magnon signal. Here, Chen et al demonstrate a van der Waals magnet based magnon valve which can be tuned electrically over an exceptionally wide range.
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1 Peking University, International Center for Quantum Materials, School of Physics, Beijing, China (GRID:grid.11135.37) (ISNI:0000 0001 2256 9319)
2 Peking University, International Center for Quantum Materials, School of Physics, Beijing, China (GRID:grid.11135.37) (ISNI:0000 0001 2256 9319); Beijing Academy of Quantum Information Sciences, Beijing, China (GRID:grid.510904.9) (ISNI:0000 0004 9362 2406)
3 Fudan University, Department of Physics and State Key Laboratory of Surface Physics, Shanghai, China (GRID:grid.8547.e) (ISNI:0000 0001 0125 2443)
4 Beijing Academy of Quantum Information Sciences, Beijing, China (GRID:grid.510904.9) (ISNI:0000 0004 9362 2406)
5 Chinese Academy of Sciences, Institute of Physics, Beijing, China (GRID:grid.9227.e) (ISNI:0000000119573309)
6 Sun Yat-sen University, State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Guangzhou, China (GRID:grid.12981.33) (ISNI:0000 0001 2360 039X)
7 Nanyang Technological University, School of Materials Science and Engineering, Singapore, Singapore (GRID:grid.59025.3b) (ISNI:0000 0001 2224 0361)
8 Peking University, International Center for Quantum Materials, School of Physics, Beijing, China (GRID:grid.11135.37) (ISNI:0000 0001 2256 9319); Beijing Academy of Quantum Information Sciences, Beijing, China (GRID:grid.510904.9) (ISNI:0000 0004 9362 2406); University of Chinese Academy of Sciences, CAS Center for Excellence in Topological Quantum Computation, Beijing, China (GRID:grid.410726.6) (ISNI:0000 0004 1797 8419)
9 Peking University, International Center for Quantum Materials, School of Physics, Beijing, China (GRID:grid.11135.37) (ISNI:0000 0001 2256 9319); Beijing Academy of Quantum Information Sciences, Beijing, China (GRID:grid.510904.9) (ISNI:0000 0004 9362 2406); Peking University, Key Laboratory for the Physics and Chemistry of Nanodevices, Beijing, China (GRID:grid.11135.37) (ISNI:0000 0001 2256 9319); Peking University, Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Beijing, China (GRID:grid.11135.37) (ISNI:0000 0001 2256 9319)