It appears you don't have support to open PDFs in this web browser. To view this file, Open with your PDF reader
Abstract
Interlayer carrier transfer at heterointerfaces plays a critical role in light to electricity conversion using organic and nanostructured materials. However, how interlayer carrier extraction at these interfaces is poorly understood, especially in organic-inorganic heterogeneous systems. Here, we provide a direct strategy for manipulating the interlayer carrier diffusion process, transfer rate and extraction efficiency in tetracene/MoS2 type-II band alignment heterostructure by constructing the 2D–3D organic-inorganic (O-I) system. As a result, the prolonged diffusion length (12.32 nm), enhanced electron transfer rate (9.53 × 109 s−1) and improved carrier extraction efficiency (60.9%) are obtained in the 2D O-I structure which may be due to the more sufficient charge transfer (CT) state generation. In addition, we have demonstrated that the interlayer carrier transfer behavior complied with the diffusion mechanism based on the one-dimensional diffusion model. The diffusion coefficients have varied from 0.0027 to 0.0036 cm2 s−1 as the organic layer changes from 3D to 2D structures. Apart from the relationship between the carrier injection and diffusion process, temperature-dependent time-resolved spectra measurement is used to reveal the trap-related recombination that may limit the interlayer carrier extraction. The controllable interlayer carrier transfer behavior enables O-I heterojunction to be optimized for optoelectronic applications.
You have requested "on-the-fly" machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Show full disclaimer
Neither ProQuest nor its licensors make any representations or warranties with respect to the translations. The translations are automatically generated "AS IS" and "AS AVAILABLE" and are not retained in our systems. PROQUEST AND ITS LICENSORS SPECIFICALLY DISCLAIM ANY AND ALL EXPRESS OR IMPLIED WARRANTIES, INCLUDING WITHOUT LIMITATION, ANY WARRANTIES FOR AVAILABILITY, ACCURACY, TIMELINESS, COMPLETENESS, NON-INFRINGMENT, MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE. Your use of the translations is subject to all use restrictions contained in your Electronic Products License Agreement and by using the translation functionality you agree to forgo any and all claims against ProQuest or its licensors for your use of the translation functionality and any output derived there from. Hide full disclaimer
Details


1 Shandong University, School of Physics, State Key Laboratory of Crystal Materials, Jinan, China (GRID:grid.27255.37) (ISNI:0000 0004 1761 1174)
2 Shandong University, School of Physics, State Key Laboratory of Crystal Materials, Jinan, China (GRID:grid.27255.37) (ISNI:0000 0004 1761 1174); The University of Melbourne, ARC Centre of Excellence in Exciton Science, School of Chemistry, Parkville, Australia (GRID:grid.1008.9) (ISNI:0000 0001 2179 088X)