It appears you don't have support to open PDFs in this web browser. To view this file, Open with your PDF reader
Abstract
Herein, an unprecedented report is presented on the incorporation of size-dependent gold nanoparticles (AuNPs) with polyvinylpyrrolidone (PVP) capping into a conventional hole transport layer, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). The hole transport layer blocks ion-diffusion/migration in methylammonium-lead-bromide (MAPbBr3)-based perovskite light-emitting diodes (PeLEDs) as a modified interlayer. The PVP-capped 90 nm AuNP device exhibited a seven-fold increase in efficiency (1.5%) as compared to the device without AuNPs (0.22%), where the device lifetime was also improved by 17-fold. This advancement is ascribed to the far-field scattering of AuNPs, modified work function and carrier trapping/detrapping. The improvement in device lifetime is attributed to PVP-capping of AuNPs which prevents indium diffusion into the perovskite layer and surface ion migration into PEDOT:PSS through the formation of induced electric dipole. The results also indicate that using large AuNPs (> 90 nm) reduces exciton recombination because of the trapping of excess charge carriers due to the large surface area.
You have requested "on-the-fly" machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Show full disclaimer
Neither ProQuest nor its licensors make any representations or warranties with respect to the translations. The translations are automatically generated "AS IS" and "AS AVAILABLE" and are not retained in our systems. PROQUEST AND ITS LICENSORS SPECIFICALLY DISCLAIM ANY AND ALL EXPRESS OR IMPLIED WARRANTIES, INCLUDING WITHOUT LIMITATION, ANY WARRANTIES FOR AVAILABILITY, ACCURACY, TIMELINESS, COMPLETENESS, NON-INFRINGMENT, MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE. Your use of the translations is subject to all use restrictions contained in your Electronic Products License Agreement and by using the translation functionality you agree to forgo any and all claims against ProQuest or its licensors for your use of the translation functionality and any output derived there from. Hide full disclaimer
Details
1 Korea University Sejong Campus, Division of Display and Semiconductor Physics, Display Convergence, College of Science and Technology, Sejong City, Republic of Korea (GRID:grid.222754.4) (ISNI:0000 0001 0840 2678); Korea University Sejong Campus, Department of Applied Physics, Sejong City, Republic of Korea (GRID:grid.222754.4) (ISNI:0000 0001 0840 2678); Korea University Sejong Campus, E-ICT-Culture-Sports Convergence Track, Sejong City, Republic of Korea (GRID:grid.222754.4) (ISNI:0000 0001 0840 2678)
2 Korea University Sejong Campus, Division of Display and Semiconductor Physics, Display Convergence, College of Science and Technology, Sejong City, Republic of Korea (GRID:grid.222754.4) (ISNI:0000 0001 0840 2678)
3 Chungbuk National University, Department of Physics, Cheongju, Republic of Korea (GRID:grid.254229.a) (ISNI:0000 0000 9611 0917)
4 Korea University, Department of Electronics and Information Engineering, Sejong, Korea (GRID:grid.222754.4) (ISNI:0000 0001 0840 2678)
5 Korea University, Department of Electronics and Information Engineering, Sejong, Korea (GRID:grid.222754.4) (ISNI:0000 0001 0840 2678); Univ. Grenoble Alpes, Univ. Savoie Mont Blanc, CNRS, Grenoble INP, IMEP-LAHC, Grenoble, France (GRID:grid.462157.3) (ISNI:0000 0004 0382 8823)
6 Korea University Sejong Campus, Department of Advanced Materials Chemistry, College of Science and Technology, Sejong City, Republic of Korea (GRID:grid.222754.4) (ISNI:0000 0001 0840 2678)
7 Korea Basic Science Institute (KBSI), Jeonju Center, Jeonju, Republic of Korea (GRID:grid.410885.0) (ISNI:0000 0000 9149 5707)
8 Korea Basic Science Institute (KBSI), Busan Center, Busan, Republic of Korea (GRID:grid.410885.0) (ISNI:0000 0000 9149 5707)
9 Pukyong National University, Department of Chemistry, Busan, Republic of Korea (GRID:grid.412576.3) (ISNI:0000 0001 0719 8994)
10 Korea Institute of Materials Science (KIMS), Surface Technology Division, Advanced Nano-Surface Department, Changwon, Republic of Korea (GRID:grid.410902.e) (ISNI:0000 0004 1770 8726)