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Abstract
In this study, the chemical decomposition of a polyimide-film (i.e., a PI-film)-surface into a soft-film-surface containing negatively charged pyromellitic dianhydride (PMDA) and neutral 4,4′-oxydianiline (ODA) was successfully performed. The chemical decomposition was conducted by designing the slurry containing 350 nm colloidal silica abrasive and small molecules with amine functional groups (i.e., ethylenediamine: EDA) for chemical–mechanical planarization (CMP). This chemical decomposition was performed through two types of hydrolysis reactions, that is, a hydrolysis reaction between OH− ions or R-NH3+ (i.e., EDA with a positively charged amine groups) and oxygen atoms covalently bonded with pyromellitimide on the PI-film-surface. In particular, the degree of slurry adsorption of the PI-film-surface was determined by the EDA concentration in the slurry because of the presence of R-NH3+, that is, a higher EDA concentration resulted in a higher degree of slurry adsorption. In addition, during CMP, the chemical decomposition degree of the PI-film-surface was principally determined by the EDA concentration; that is, the degree of chemical composition was increased noticeably and linearly with the EDA concentration. Thus, the polishing-rate of the PI-film-surface increased notably with the EDA concentration in the CMP slurry.
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Details
1 Hanyang University, Department of Nanoscale Semiconductor Engineering, Seoul, Republic of Korea (GRID:grid.49606.3d) (ISNI:0000 0001 1364 9317)
2 Hanyang University, Department of Electronics and Communications Engineering, Seoul, Republic of Korea (GRID:grid.49606.3d) (ISNI:0000 0001 1364 9317)
3 UB Materials Inc., Gyeonggi-do, Republic of Korea (GRID:grid.49606.3d)
4 Samsung Display Co., Ltd., Department of Process Research Team, Display Research Center, Gyeonggi-do, Republic of Korea (GRID:grid.419666.a) (ISNI:0000 0001 1945 5898)
5 Hanyang University, Department of Nanoscale Semiconductor Engineering, Seoul, Republic of Korea (GRID:grid.49606.3d) (ISNI:0000 0001 1364 9317); Hanyang University, Department of Electronics and Communications Engineering, Seoul, Republic of Korea (GRID:grid.49606.3d) (ISNI:0000 0001 1364 9317)