It appears you don't have support to open PDFs in this web browser. To view this file, Open with your PDF reader
Abstract
Aiming at the problem of hydrogen content exceeding the standard in GaAs device, the influence mechanism of hydrogen content exceeding the standard on the device is analyzed, the failure model of hydrogen content exceeding the standard in GaAs device in engineering is given, the source of hydrogen is analyzed, and the protective measures of hydrogen content exceeding the standard are given. It is of certain guiding significance for future engineering application.
You have requested "on-the-fly" machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Show full disclaimer
Neither ProQuest nor its licensors make any representations or warranties with respect to the translations. The translations are automatically generated "AS IS" and "AS AVAILABLE" and are not retained in our systems. PROQUEST AND ITS LICENSORS SPECIFICALLY DISCLAIM ANY AND ALL EXPRESS OR IMPLIED WARRANTIES, INCLUDING WITHOUT LIMITATION, ANY WARRANTIES FOR AVAILABILITY, ACCURACY, TIMELINESS, COMPLETENESS, NON-INFRINGMENT, MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE. Your use of the translations is subject to all use restrictions contained in your Electronic Products License Agreement and by using the translation functionality you agree to forgo any and all claims against ProQuest or its licensors for your use of the translation functionality and any output derived there from. Hide full disclaimer
Details
1 Xi ‘an Branch of the Fifth Aerospace Institute , China