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Abstract
The increase in the resistivity with decreasing temperature followed by a drop by more than one order of magnitude is observed on the metallic side near the zero-magnetic-field metal-insulator transition in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells. We find that the temperature
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1 Institute of Solid State Physics, Chernogolovka, Moscow District, Russia (GRID:grid.418975.6) (ISNI:0000 0004 0638 3102)
2 University of Belgrade, Institute of Physics Belgrade, Belgrade, Serbia (GRID:grid.7149.b) (ISNI:0000 0001 2166 9385)
3 Florida State University, Department of Physics and National High Magnetic Field Laboratory, Tallahassee, USA (GRID:grid.255986.5) (ISNI:0000 0004 0472 0419)
4 National Taiwan University, Department of Electrical Engineering and Graduate Institute of Electronics Engineering, Taipei, Taiwan (GRID:grid.19188.39) (ISNI:0000 0004 0546 0241)
5 Northeastern University, Department of Physics, Boston, USA (GRID:grid.261112.7) (ISNI:0000 0001 2173 3359)