Abstract

The increase in the resistivity with decreasing temperature followed by a drop by more than one order of magnitude is observed on the metallic side near the zero-magnetic-field metal-insulator transition in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells. We find that the temperature Tmax, at which the resistivity exhibits a maximum, is close to the renormalized Fermi temperature. However, rather than increasing along with the Fermi temperature, the value Tmax decreases appreciably for spinless electrons in spin-polarizing (parallel) magnetic fields. The observed behaviour of Tmax cannot be described by existing theories. The results indicate the spin-related origin of the effect.

Details

Title
Spin effect on the low-temperature resistivity maximum in a strongly interacting 2D electron system
Author
Shashkin, A A 1 ; Yu, Melnikov M 1 ; Dolgopolov, V T 1 ; Radonjić, M M 2 ; Dobrosavljević, V 3 ; S-H, Huang 4 ; Liu, C W 4 ; Zhu Amy Y X 5 ; Kravchenko, S V 5 

 Institute of Solid State Physics, Chernogolovka, Moscow District, Russia (GRID:grid.418975.6) (ISNI:0000 0004 0638 3102) 
 University of Belgrade, Institute of Physics Belgrade, Belgrade, Serbia (GRID:grid.7149.b) (ISNI:0000 0001 2166 9385) 
 Florida State University, Department of Physics and National High Magnetic Field Laboratory, Tallahassee, USA (GRID:grid.255986.5) (ISNI:0000 0004 0472 0419) 
 National Taiwan University, Department of Electrical Engineering and Graduate Institute of Electronics Engineering, Taipei, Taiwan (GRID:grid.19188.39) (ISNI:0000 0004 0546 0241) 
 Northeastern University, Department of Physics, Boston, USA (GRID:grid.261112.7) (ISNI:0000 0001 2173 3359) 
Publication year
2022
Publication date
2022
Publisher
Nature Publishing Group
e-ISSN
20452322
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2642822810
Copyright
© The Author(s) 2022. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.