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© 2022 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.

Abstract

In this study, we fabricated a random nanostructure (RNS) external light extraction composite layer containing high-refractive-index nanoparticles through a simple and inexpensive solution process and a low-temperature mask-free process. We focused on varying the shape and density of the RNSs and adjusted the concentration of the high-refractive-index nanoparticles to control the optical properties. The RNSs fabricated using a low-temperature mask-free process can use the distance between the nanostructures and various forms to control the diffraction and scattering effects in the visible light wavelength range. Consequently, our film exhibited a direct transmittance of ~85% at a wavelength of 550 nm. Furthermore, when the RNSs’ composite film, manufactured using the low-temperature mask-free process, was applied to organic light-emitting diodes (OLEDs), it exhibited an external quantum efficiency improvement of 32.2% compared with the OLEDs without the RNSs. Therefore, the randomly distributed high-refractive-index nanoparticles on the polymer film can reduce the waveguide mode and total reflection at the substrate/air interface. These films can be used as a scattering layer to reduce the loss of the OLED substrate mode.

Details

Title
A Simple Method for Fabricating an External Light Extraction Composite Layer with RNS to Improve the Optical Properties of OLEDs
Author
Geun-Su, Choi 1   VIAFID ORCID Logo  ; Shin-Woo, Kang 2 ; Eun-Jeong Bae 2   VIAFID ORCID Logo  ; Eun-Bi Jang 1   VIAFID ORCID Logo  ; Dong-Hyun Baek 3 ; Byeong-Kwon Ju 4   VIAFID ORCID Logo  ; Young-Wook, Park 1   VIAFID ORCID Logo 

 Nano and Organic-Electronics Laboratory, Department of Display and Semiconductor Engineering, Sun Moon University, Asan 31460, Korea; [email protected] (G.-S.C.); [email protected] (S.-W.K.); [email protected] (E.-J.B.); [email protected] (E.-B.J.) 
 Nano and Organic-Electronics Laboratory, Department of Display and Semiconductor Engineering, Sun Moon University, Asan 31460, Korea; [email protected] (G.-S.C.); [email protected] (S.-W.K.); [email protected] (E.-J.B.); [email protected] (E.-B.J.); Display and Nanosystem Laboratory, Department of Electrical Engineering, Korea University, Seoul 02841, Korea 
 Center for Next Generation Semiconductor Technology, Department of Display and Semiconductor Engineering, Sun Moon University, Asan 31460, Korea; [email protected] 
 Display and Nanosystem Laboratory, Department of Electrical Engineering, Korea University, Seoul 02841, Korea 
First page
1430
Publication year
2022
Publication date
2022
Publisher
MDPI AG
e-ISSN
20794991
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2663082116
Copyright
© 2022 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.