Details

Title
Author Correction: Laser slice thinning of GaN-on-GaN high electron mobility transistors
Author
Tanaka, Atsushi 1 ; Sugiura Ryuji 2 ; Kawaguchi Daisuke 2 ; Wani Yotaro 2 ; Watanabe Hirotaka 3 ; Sena Hadi 3 ; Ando Yuto 3 ; Honda Yoshio 3 ; Igasaki Yasunori 4 ; Wakejima Akio 5 ; Ando Yuji 3 ; Amano, Hiroshi 3 

 Nagoya University, Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Aichi, Japan (GRID:grid.27476.30) (ISNI:0000 0001 0943 978X); National Institute for Materials Science, Tsukuba, Japan (GRID:grid.21941.3f) (ISNI:0000 0001 0789 6880) 
 Hamamatsu Photonics K. K., Research & Development Department, Electron Tube Division, Shizuoka, Japan (GRID:grid.21941.3f) 
 Nagoya University, Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Aichi, Japan (GRID:grid.27476.30) (ISNI:0000 0001 0943 978X) 
 Hamamatsu Photonics K. K., Research & Development Department, Electron Tube Division, Shizuoka, Japan (GRID:grid.27476.30) 
 Nagoya Institute of Technology, Department of Electrical and Mechanical Engineering, Aichi, Japan (GRID:grid.47716.33) (ISNI:0000 0001 0656 7591) 
Publication year
2022
Publication date
2022
Publisher
Nature Publishing Group
e-ISSN
20452322
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2665413949
Copyright
© The Author(s) 2022. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.