Abstract

Doping is an essential element to develop next-generation electronic and optoelectronic devices and has to break the limit of specific steps during material synthesis and device fabrication. Here the authors reveal “clean” doping to enhance the electric and photoelectric performance of two-dimensional (2D) indium selenide (InSe) via a neutron-transmutation method for the first time, even after device fabrication.

Details

Title
“Clean” doping to advance 2D material phototransistors
Author
Wang, Zhen 1 ; Wang, Peng 1 ; Hu, Weida 1   VIAFID ORCID Logo 

1  Chinese Academy of Sciences, State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Shanghai, China (GRID:grid.9227.e) (ISNI:0000000119573309) 
Publication year
2022
Publication date
2022
Publisher
Springer Nature B.V.
e-ISSN
20477538
Source type
Scholarly Journal
Language of publication
English
DOI
https://doi.org/10.1038/s41377-022-00842-4
ProQuest document ID
2673242466
Copyright
© The Author(s) 2022. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.