Circularly polarized light-sensitive, hot electron transistor with chiral plasmonic nanoparticles

Abstract

The quantitative detection of circularly polarized light (CPL) is necessary in next-generation optical communication carrying high-density information and in phase-controlled displays exhibiting volumetric imaging. In the current technology, multiple pixels of different wavelengths and polarizers are required, inevitably resulting in high loss and low detection efficiency. Here, we demonstrate a highly efficient CPL-detecting transistor composed of chiral plasmonic nanoparticles with a high Khun’s dissymmetry (g-factor) of 0.2 and a high mobility conducting oxide of InGaZnO. The device successfully distinguished the circular polarization state and displayed an unprecedented photoresponsivity of over 1 A/W under visible CPL excitation. This observation is mainly attributed to the hot electron generation in chiral plasmonic nanoparticles and to the effective collection of hot electrons in the oxide semiconducting transistor. Such characteristics further contribute to opto-neuromorphic operation and the artificial nervous system based on the device successfully performs image classification work. We anticipate that our strategy will aid in the rational design and fabrication of a high-performance CPL detector and opto-neuromorphic operation with a chiral plasmonic structure depending on the wavelength and circular polarization state.

One challenge with using circularly polarized light is an increased device complexity typically required to provide sufficient sensitivity to the polarization. Here, by integrating chiral plasmonic nanoparticles with a InGaZnO hot electron transistor, the authors present a polarization sensitive, optically active transistor.