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© 2022. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.

Abstract

Emerging in‐memory computing (IMC) technology promises to tackle the memory wall bottleneck in modern systems. Promoted as a promising building block, nonvolatile spin–orbit torque (SOT) memory devices with sub‐ns and sub‐pJ processing capabilities are thereby extensively pursued. Herein, a new type of domain wall device is experimentally presented with multistates driven by nonvolatile SOT and Dzyaloshinskii–Moriya interaction, enabling time and energy‐efficient IMC with a full adder (FA) implementation based on magnetic tunnel junctions. Complementary micromagnetic and device–circuit cosimulation results show that the write/read latency of the proposed FA can be shortened to 1.25 ns/0.22 ns with an averaged writing energy of 8.41 fJ bit−1, and the overall dynamic power is 26.25 μW, which is 4.43–51.96 times lower than state‐of‐the‐art alternatives. Moreover, the developed architecture can perform all 16 Boolean logic functions, warranting an extensive arithmetic operation. The experimental, micromagnetic, and circuit‐level simulation results show great potential in both fundamental research and new trajectories in technology development for nonvolatile in‐memory computing applications.

Details

Title
Implementation of Highly Reliable and Energy‐Efficient Nonvolatile In‐Memory Computing using Multistate Domain Wall Spin–Orbit Torque Device
Author
Lin, Huai 1 ; Xu, Nuo 2 ; Wang, Di 1 ; Liu, Long 1 ; Zhao, Xuefeng 3 ; Zhou, Yongjian 4 ; Luo, Xuming 5 ; Cheng, Song 4 ; Yu, Guoqiang 5 ; Xing, Guozhong 1   VIAFID ORCID Logo 

 Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, P. R. China; University of the Chinese Academy of Sciences, Beijing, P. R. China 
 Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA 
 Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, P. R. China; University of the Chinese Academy of Sciences, Beijing, P. R. China; School of Microelectronics, University of Science and Technology of China, Hefei, Anhui, P. R. China 
 Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, P. R. China 
 Institute of Physics, Chinese Academy of Sciences, Beijing, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China 
Section
Research Articles
Publication year
2022
Publication date
Sep 2022
Publisher
John Wiley & Sons, Inc.
e-ISSN
26404567
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2716403911
Copyright
© 2022. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.