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Abstract
The interactions between electrons and antiferromagnetic magnons (AFMMs) are important for a large class of correlated materials. For example, they are the most plausible pairing glues in high-temperature superconductors, such as cuprates and iron-based superconductors. However, unlike electron-phonon interactions (EPIs), clear-cut observations regarding how electron-AFMM interactions (EAIs) affect the band structure are still lacking. Consequently, critical information on the EAIs, such as its strength and doping dependence, remains elusive. Here we directly observe that EAIs induce a kink structure in the band dispersion of Ba1−xKxMn2As2, and subsequently unveil several key characteristics of EAIs. We found that the coupling constant of EAIs can be as large as 5.4, and it shows strong doping dependence and temperature dependence, all in stark contrast to the behaviors of EPIs. The colossal renormalization of electron bands by EAIs enhances the density of states at Fermi energy, which is likely driving the emergent ferromagnetic state in Ba1−xKxMn2As2 through a Stoner-like mechanism with mixed itinerant-local character. Our results expand the current knowledge of EAIs, which may facilitate the further understanding of many correlated materials where EAIs play a critical role.
The interaction between antiferromagnetic magnons and electrons sits at the heart of many strongly correlated systems, however, investigation has been hampered by a lack of clear-cut examples. Here, Yu et al directly observe a kink in the dispersion, a result of renormalization due to the electron-antiferromagnetic magnon interaction.
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1 Fudan University, Laboratory of Advanced Materials, State Key Laboratory of Surface Physics and Department of Physics, Shanghai, P. R. China (GRID:grid.8547.e) (ISNI:0000 0001 0125 2443)
2 Fudan University, Laboratory of Advanced Materials, State Key Laboratory of Surface Physics and Department of Physics, Shanghai, P. R. China (GRID:grid.8547.e) (ISNI:0000 0001 0125 2443); Shanghai Research Center for Quantum Sciences, Shanghai, P. R. China (GRID:grid.9227.e) (ISNI:0000000119573309); Collaborative Innovation Center of Advanced Microstructures, Nanjing, China (GRID:grid.509497.6)
3 Zhejiang University, Department of Physics, Hangzhou, P. R. China (GRID:grid.13402.34) (ISNI:0000 0004 1759 700X)
4 Harwell Science and Innovation Campus, Diamond Light Source, Didcot, UK (GRID:grid.18785.33) (ISNI:0000 0004 1764 0696)
5 Lawrence Berkeley National Laboratory, Advanced Light Source, Berkeley, USA (GRID:grid.184769.5) (ISNI:0000 0001 2231 4551)
6 Paul Scherrer Institut, Swiss Light Source, Villigen, Switzerland (GRID:grid.5991.4) (ISNI:0000 0001 1090 7501)
7 Fudan University, Laboratory of Advanced Materials, State Key Laboratory of Surface Physics and Department of Physics, Shanghai, P. R. China (GRID:grid.8547.e) (ISNI:0000 0001 0125 2443); Shanghai Research Center for Quantum Sciences, Shanghai, P. R. China (GRID:grid.9227.e) (ISNI:0000000119573309)
8 Fudan University, Laboratory of Advanced Materials, State Key Laboratory of Surface Physics and Department of Physics, Shanghai, P. R. China (GRID:grid.8547.e) (ISNI:0000 0001 0125 2443); Shanghai Research Center for Quantum Sciences, Shanghai, P. R. China (GRID:grid.9227.e) (ISNI:0000000119573309); Collaborative Innovation Center of Advanced Microstructures, Nanjing, China (GRID:grid.509497.6); University of Science and Technology of China, Hefei National Laboratory for Physical Science at Microscale, CAS Center for Excellence in Quantum Information and Quantum Physics, and Department of Physics, Hefei, P. R. China (GRID:grid.59053.3a) (ISNI:0000000121679639)