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Abstract
Two-dimensional conjugated metal-organic frameworks (2D c-MOFs) have attracted increasing interests for (opto)-electronics and spintronics. They generally consist of van der Waals stacked layers and exhibit layer-depended electronic properties. While considerable efforts have been made to regulate the charge transport within a layer, precise control of electronic coupling between layers has not yet been achieved. Herein, we report a strategy to precisely tune interlayer charge transport in 2D c-MOFs via side-chain induced control of the layer spacing. We design hexaiminotriindole ligands allowing programmed functionalization with tailored alkyl chains (HATI_CX, X = 1,3,4; X refers to the carbon numbers of the alkyl chains) for the synthesis of semiconducting Ni3(HATI_CX)2. The layer spacing of these MOFs can be precisely varied from 3.40 to 3.70 Å, leading to widened band gap, suppressed carrier mobilities, and significant improvement of the Seebeck coefficient. With this demonstration, we further achieve a record-high thermoelectric power factor of 68 ± 3 nW m−1 K−2 in Ni3(HATI_C3)2, superior to the reported holes-dominated MOFs.
Layered metal-organic frameworks attract interests for optoelectronics and spintronics. Here, the authors report a strategy to tune interlayer charge transport and thermoelectric properties via side-chain induced control of the layer spacing.
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1 Technische Universität Dresden, Center for Advancing Electronics Dresden & Faculty of Chemistry and Food Chemistry, Dresden, Germany (GRID:grid.4488.0) (ISNI:0000 0001 2111 7257)
2 Linköping University, Laboratory of Organic Electronics, Department of Science and Technology, Norrköping, Sweden (GRID:grid.5640.7) (ISNI:0000 0001 2162 9922)
3 Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA Nanociencia), Madrid, Spain (GRID:grid.429045.e) (ISNI:0000 0004 0500 5230)
4 Technische Universität Dresden, Center for Advancing Electronics Dresden & Faculty of Chemistry and Food Chemistry, Dresden, Germany (GRID:grid.4488.0) (ISNI:0000 0001 2111 7257); Universität Ulm, Central Facility for Electron Microscopy, Electron Microscopy of Materials Science, Ulm, Germany (GRID:grid.6582.9) (ISNI:0000 0004 1936 9748)
5 Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, Germany (GRID:grid.40602.30) (ISNI:0000 0001 2158 0612)
6 Technische Universität Dresden, Dresden Center for Nanoanalysis (DCN), Center for Advancing Electronics Dresden (Cfaed), Dresden, Germany (GRID:grid.4488.0) (ISNI:0000 0001 2111 7257)
7 Technische Universität Dresden, Center for Advancing Electronics Dresden & Faculty of Chemistry and Food Chemistry, Dresden, Germany (GRID:grid.4488.0) (ISNI:0000 0001 2111 7257); Max Planck Institute of Microstructure Physics, Halle (Saale), Germany (GRID:grid.450270.4) (ISNI:0000 0004 0491 5558)
8 Technische Universität Dresden, Center for Advancing Electronics Dresden & Faculty of Chemistry and Food Chemistry, Dresden, Germany (GRID:grid.4488.0) (ISNI:0000 0001 2111 7257); Shandong University, Key Laboratory of Colloid and Interface Chemistry of the Ministry of Education, School of Chemistry and Chemical Engineering, Jinan, China (GRID:grid.27255.37) (ISNI:0000 0004 1761 1174)