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Abstract
Brain-inspired electronics require artificial synapses that have ultra-low energy consumption, high operating speed, and stable flexibility. Here, we demonstrate a flexible artificial synapse that uses a rapidly crystallized perovskite layer at room temperature. The device achieves a series of synaptic functions, including logical operations, temporal and spatial rules, and associative learning. Passivation using phenethyl-ammonium iodide eliminated defects and charge traps to reduce the energy consumption to 13.5 aJ per synaptic event, which is the world record for two-terminal artificial synapses. At this ultralow energy consumption, the device achieves ultrafast response frequency of up to 4.17 MHz; which is orders of magnitude magnitudes higher than previous perovskite artificial synapses. A multi-stimulus accumulative artificial neuromuscular system was then fabricated using the perovskite synapse as a key processing unit to control electrochemical artificial muscles, and realized muscular-fatigue warning. This artificial synapse will have applications in future bio-inspired electronics and neurorobots.
Designing efficient brain-inspired electronics remains a challenge. Here, Liu et al. develop a flexible perovskite-based artificial synapse with low energy consumption and fast response frequency and realize an artificial neuromuscular system with muscular-fatigue warning.
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1 Institute of Photoelectronic Thin Film Devices and Technology of Nankai University; Solar Energy Research Center of Nankai University; Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin; Engineering Research Center of Thin Film Photoelectronic Technology, Ministry of Education, #38 Tongyan Road, Jinnan District, Tianjin, China (GRID:grid.419897.a) (ISNI:0000 0004 0369 313X); Shenzhen Research Institute of Nankai University, Shenzhen, China (GRID:grid.419897.a); Nankai University, Smart Sensing Interdisciplinary Science Center, Tianjin, China (GRID:grid.216938.7) (ISNI:0000 0000 9878 7032)
2 Institute of Photoelectronic Thin Film Devices and Technology of Nankai University; Solar Energy Research Center of Nankai University; Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin; Engineering Research Center of Thin Film Photoelectronic Technology, Ministry of Education, #38 Tongyan Road, Jinnan District, Tianjin, China (GRID:grid.419897.a) (ISNI:0000 0004 0369 313X)
3 Institute of Photoelectronic Thin Film Devices and Technology of Nankai University; Solar Energy Research Center of Nankai University; Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin; Engineering Research Center of Thin Film Photoelectronic Technology, Ministry of Education, #38 Tongyan Road, Jinnan District, Tianjin, China (GRID:grid.419897.a) (ISNI:0000 0004 0369 313X); Hebei University of Science and Technology, College of Chemical and Pharmaceutical Engineering, Shijiazhuang, China (GRID:grid.462323.2) (ISNI:0000 0004 1805 7347)
4 Hebei University of Science and Technology, College of Chemical and Pharmaceutical Engineering, Shijiazhuang, China (GRID:grid.462323.2) (ISNI:0000 0004 1805 7347)