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Abstract
The InGaN multiple quantum wells (MQW) samples with the undoped and Si doped GaN barriers were grown by Metal Organic Vapour Phase Epitaxy (MOVPE). By comparing defects-related emission bands in the undoped GaN and InGaN layers, one may conclude that the band is complex in the InGaN layer, composed of at least two contributions peaking at 2.17 and 2.39 eV, respectively. In and Si affect the intensity of the defects-related band – the larger the In and/or Si concentration the stronger the band. The detailed investigation of the observed phenomena was conducted, and the observed peculiarities were explained.
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Details
1 FZU - Institute of Physics of the Czech Academy of Sciences , Cukrovarnická 10/112, 162 00, Prague , Czech Republic
2 FZU - Institute of Physics of the Czech Academy of Sciences , Cukrovarnická 10/112, 162 00, Prague , Czech Republic; Faculty of Nuclear Sciences and Physical Engineering, The Czech Technical University , Břehová 7, 115 19, Prague , Czech Republic