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© 2022 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.

Abstract

High-quality pentacene-doped p-terphenyl bulk crystals were grown by the selective self-seeding vertical Bridgman technique (SSVBT). The lattice structure and crystal properties of the samples of different doping concentrations and their relations with p-terphenyl single crystals were tested and analyzed. The doping effects of pentacene doping at different concentrations in p-terphenyl molecular crystals are discussed. The powder X-ray diffraction, FTIR, and 1H NMR studies show that no additional peaks (except for p-terphenyl) are observed in the spectra of two doped crystals. The results indicate that guest molecules appear as defects in the form of irregularly oriented molecules which do not significantly change the crystal structures. As the doping concentration increases, the average crystallite size decreases, and the crystallinity declines. The ultraviolet–visible absorption and fluorescence spectra show that with added pentacene molecules, the characteristic peak intensities decrease in the spectra owing to the p-terphenyl molecular transition. Meanwhile, characteristic peaks appear due to the pentacene molecular transition. Moreover, with the increase of doping concentration, the intensities of characteristic peaks of host molecules decrease continuously, and those of guest molecules increase accordingly.

Details

Title
Growth of Pentacene-Doped p-Terphenyl Crystals Using SSVBT and Doping Effects in p-Terphenyl Molecular Crystals
Author
Ai, Qing 1   VIAFID ORCID Logo  ; Chen, Peifeng 2 ; Xu, Yebin 2 ; Zhang, Lei 3 

 School of Electrical Engineering and Automation, Hubei Normal University, Cihu Road No. 11, Huangshi 435002, China 
 School of Optical and Electronic Information, Huazhong University of Science and Technology, Luoyu Road No. 1037, Wuhan 430074, China 
 School of Electrical and Electronic Information Engineering, Hubei Polytechnic University, North Guilin Road No. 16, Huangshi 435003, China 
First page
2
Publication year
2023
Publication date
2023
Publisher
MDPI AG
e-ISSN
20734352
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2767196094
Copyright
© 2022 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.