Sub-10 fJ/bit radiation-hard nanoelectromechanical non-volatile memory

Abstract

With the exponential growth of the semiconductor industry, radiation-hardness has become an indispensable property of memory devices. However, implementation of radiation-hardened semiconductor memory devices inevitably requires various radiation-hardening technologies from the layout level to the system level, and such technologies incur a significant energy overhead. Thus, there is a growing demand for emerging memory devices that are energy-efficient and intrinsically radiation-hard. Here, we report a nanoelectromechanical non-volatile memory (NEM-NVM) with an ultra-low energy consumption and radiation-hardness. To achieve an ultra-low operating energy of less than 10 ${\mathrm{fJ\; bit}}^{-1}$, we introduce an out-of-plane electrode configuration and electrothermal erase operation. These approaches enable the NEM-NVM to be programmed with an ultra-low energy of 2.83 ${\mathrm{fJ\; bit}}^{-1}$. Furthermore, due to its mechanically operating mechanisms and radiation-robust structural material, the NEM-NVM retains its superb characteristics without radiation-induced degradation such as increased leakage current, threshold voltage shift, and unintended bit-flip even after 1 Mrad irradiation.

Achieving both low energy consumption and radiation-hardness is highly challenging in memory devices. Here, the authors demonstrate a sub-10 fJ/bit, radiation-hard nanoelectromechanical non-volatile memory through structural and material approaches.