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Abstract
The emerging hybrid integrated quantum photonics combines the advantages of different functional components into a single chip to meet the stringent requirements for quantum information processing. Despite the tremendous progress in hybrid integrations of III-V quantum emitters with silicon-based photonic circuits and superconducting single-photon detectors, on-chip optical excitations of quantum emitters via miniaturized lasers towards single-photon sources (SPSs) with low power consumptions, small device footprints, and excellent coherence properties is highly desirable yet illusive. In this work, we present realizations of bright semiconductor SPSs heterogeneously integrated with on-chip electrically-injected microlasers. Different from previous one-by-one transfer printing technique implemented in hybrid quantum dot (QD) photonic devices, multiple deterministically coupled QD-circular Bragg Grating (CBG) SPSs were integrated with electrically-injected micropillar lasers at one time via a potentially scalable transfer printing process assisted by the wide-field photoluminescence (PL) imaging technique. Optically pumped by electrically-injected microlasers, pure single photons are generated with a high-brightness of a count rate of 3.8 M/s and an extraction efficiency of 25.44%. Such a high-brightness is due to the enhancement by the cavity mode of the CBG, which is confirmed by a Purcell factor of 2.5. Our work provides a powerful tool for advancing hybrid integrated quantum photonics in general and boosts the developments for realizing highly-compact, energy-efficient and coherent SPSs in particular.
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1 Sun Yat-sen University, State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, School of Electronics and Information Technology, Guangzhou, China (GRID:grid.12981.33) (ISNI:0000 0001 2360 039X)
2 Hisilicon Research, Huawei Technologies Co., Ltd, Shenzhen, China (GRID:grid.453400.6) (ISNI:0000 0000 8743 5787)
3 Institute of Semiconductors, Chinese Academy of Sciences, State Key Laboratory for Superlattice and Microstructures, State Key Laboratory on Integrated Optoelectronics, Beijing, China (GRID:grid.454865.e) (ISNI:0000 0004 0632 513X); University of Chinese Academy of Sciences, Center of Materials Science and Optoelectronics Engineering, Beijing, China (GRID:grid.410726.6) (ISNI:0000 0004 1797 8419)