Abstract

Among silicon-based solar cells, heterojunction cells hold the world efficiency record. However, their market acceptance is hindered by an initial 0.5% per year degradation of their open circuit voltage which doubles the overall cell degradation rate. Here, we study the performance degradation of crystalline-Si/amorphous-Si:H heterojunction stacks. First, we experimentally measure the interface defect density over a year, the primary driver of the degradation. Second, we develop SolDeg, a multiscale, hierarchical simulator to analyze this degradation by combining Machine Learning, Molecular Dynamics, Density Functional Theory, and Nudged Elastic Band methods with analytical modeling. We discover that the chemical potential for mobile hydrogen develops a gradient, forcing the hydrogen to drift from the interface, leaving behind recombination-active defects. We find quantitative correspondence between the calculated and experimentally determined defect generation dynamics. Finally, we propose a reversed Si-density gradient architecture for the amorphous-Si:H layer that promises to reduce the initial open circuit voltage degradation from 0.5% per year to 0.1% per year.

Silicon heterojunction solar cells are highly efficient, but their degradation hinders market acceptance. Here, experimental measurements combined with machine learning methods show that mobile hydrogen develops a gradient, forcing it to drift from the interface and leaving behind defects.

Details

Title
Hydrogen-induced degradation dynamics in silicon heterojunction solar cells via machine learning
Author
Diggs, Andrew 1   VIAFID ORCID Logo  ; Zhao, Zitong 1 ; Meidanshahi, Reza Vatan 2 ; Unruh, Davis 3 ; Manzoor, Salman 2 ; Bertoni, Mariana 2   VIAFID ORCID Logo  ; Goodnick, Stephen M. 2 ; Zimányi, Gergely T. 1 

 University of California, Physics Department, Davis, USA (GRID:grid.27860.3b) (ISNI:0000 0004 1936 9684) 
 Arizona State University, School of Electrical, Computer and Energy Engineering, Tempe, USA (GRID:grid.215654.1) (ISNI:0000 0001 2151 2636) 
 University of California, Physics Department, Davis, USA (GRID:grid.27860.3b) (ISNI:0000 0004 1936 9684); Argonne National Laboratory, Center for Nanoscale Materials, Lemont, USA (GRID:grid.187073.a) (ISNI:0000 0001 1939 4845) 
Pages
24
Publication year
2023
Publication date
Dec 2023
Publisher
Nature Publishing Group
e-ISSN
26624443
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2799931859
Copyright
© The Author(s) 2023. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.