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Abstract
Solution growth of single-crystal ferroelectric oxide films has long been pursued for the low-cost development of high-performance electronic and optoelectronic devices. However, the established principles of vapor-phase epitaxy cannot be directly applied to solution epitaxy, as the interactions between the substrates and the grown materials in solution are quite different. Here, we report the successful epitaxy of single-domain ferroelectric oxide films on Nb-doped SrTiO3 single-crystal substrates by solution reaction at a low temperature of ~200 oC. The epitaxy is mainly driven by an electronic polarization screening effect at the interface between the substrates and the as-grown ferroelectric oxide films, which is realized by the electrons from the doped substrates. Atomic-level characterization reveals a nontrivial polarization gradient throughout the films in a long range up to ~500 nm because of a possible structural transition from the monoclinic phase to the tetragonal phase. This polarization gradient generates an extremely high photovoltaic short-circuit current density of ~2.153 mA/cm2 and open-circuit voltage of ~1.15 V under 375 nm light illumination with power intensity of 500 mW/cm2, corresponding to the highest photoresponsivity of ~4.306×10−3 A/W among all known ferroelectrics. Our results establish a general low-temperature solution route to produce single-crystal gradient films of ferroelectric oxides and thus open the avenue for their broad applications in self-powered photo-detectors, photovoltaic and optoelectronic devices.
Developing low-temperature solution epitaxy and elucidating its underlying mechanisms is highly desired for low-cost fabrication of single-crystal ferroelectric films. Here, the authors show that a polarization screening between ferroelectrics and substrates can tailor the interface energy and drive the solution epitaxy of polarization-gradient ferroelectric oxide films, demonstrating a remarkable photovoltaic effect.
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1 Zhejiang University, State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Hangzhou, China (GRID:grid.13402.34) (ISNI:0000 0004 1759 700X)
2 Zhejiang University, Center of Electron Microscope, School of Materials Science and Engineering, Hangzhou, China (GRID:grid.13402.34) (ISNI:0000 0004 1759 700X)
3 University of Pennsylvania, Department of Chemistry, Philadelphia, USA (GRID:grid.25879.31) (ISNI:0000 0004 1936 8972); The University of Texas at Austin, Oden Institute for Computational Engineering and Sciences, Austin, USA (GRID:grid.89336.37) (ISNI:0000 0004 1936 9924)
4 Westlake University, Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Hangzhou, China (GRID:grid.494629.4) (ISNI:0000 0004 8008 9315)
5 Zhejiang University, Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of physics, Hangzhou, China (GRID:grid.13402.34) (ISNI:0000 0004 1759 700X)
6 Zhejiang University, State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Hangzhou, China (GRID:grid.13402.34) (ISNI:0000 0004 1759 700X); Zhejiang University, Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of physics, Hangzhou, China (GRID:grid.13402.34) (ISNI:0000 0004 1759 700X)
7 Center for High Pressure Science and Technology Advanced Research, Shanghai, China (GRID:grid.410733.2)
8 Tsinghua University, State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Beijing, China (GRID:grid.12527.33) (ISNI:0000 0001 0662 3178)
9 Zhejiang University, State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Hangzhou, China (GRID:grid.13402.34) (ISNI:0000 0004 1759 700X); Zhejiang University, Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, China (GRID:grid.13402.34) (ISNI:0000 0004 1759 700X)
10 Zhejiang University, State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Hangzhou, China (GRID:grid.13402.34) (ISNI:0000 0004 1759 700X); Research Center for Intelligent Sensing, Zhejiang Lab, Hangzhou, China (GRID:grid.510538.a) (ISNI:0000 0004 8156 0818)
11 University of Pennsylvania, Department of Chemistry, Philadelphia, USA (GRID:grid.25879.31) (ISNI:0000 0004 1936 8972)