Abstract

The two-dimensional Quantum Hall effect with no external magnetic field is called the Quantum anomalous Hall (QAH) effect. So far, experimentally realized QAH insulators all exhibit ferromagnetic order and the QAH effect only occurs at very low temperatures. On the other hand, up to now the QAH effect in collinear antiferromagnetic (AFM) materials has never been reported and the corresponding mechanism has never been proposed. In this work, we realize the QAH effect by proposing a four-band lattice model with static AFM order, which indicates that the QAH effect can be found in AFM materials. Then, as a prototype, we demonstrate that a monolayer CrO can be switched from an AFM Weyl semimetal to an AFM QAH insulator by applying strain, based on symmetry analysis and the first-principles electronic structure calculations. Our work not only proposes a scenario to search for QAH insulators in materials, but also reveals a way to considerably increase the critical temperature of the QAH phase.

Details

Title
Quantum anomalous hall effect in collinear antiferromagnetism
Author
Guo, Peng-Jie 1   VIAFID ORCID Logo  ; Liu, Zheng-Xin 1   VIAFID ORCID Logo  ; Lu, Zhong-Yi 1   VIAFID ORCID Logo 

 Renmin University of China, Department of physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Beijing, China (GRID:grid.24539.39) (ISNI:0000 0004 0368 8103) 
Pages
70
Publication year
2023
Publication date
2023
Publisher
Nature Publishing Group
e-ISSN
20573960
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2808093043
Copyright
© The Author(s) 2023. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.