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Abstract
The stacking of twisted two-dimensional (2D) layered materials has led to the creation of moiré superlattices, which have become a new platform for the study of quantum optics. The strong coupling of moiré superlattices can result in flat minibands that boost electronic interactions and generate interesting strongly correlated states, including unconventional superconductivity, Mott insulating states, and moiré excitons. However, the impact of adjusting and localizing moiré excitons in Van der Waals heterostructures has yet to be explored experimentally. Here, we present experimental evidence of the localization-enhanced moiré excitons in the twisted WSe2/WS2/WSe2 heterotrilayer with type-II band alignments. At low temperatures, we observed multiple excitons splitting in the twisted WSe2/WS2/WSe2 heterotrilayer, which is manifested as multiple sharp emission lines, in stark contrast to the moiré excitonic behavior of the twisted WSe2/WS2 heterobilayer (which has a linewidth 4 times wider). This is due to the enhancement of the two moiré potentials in the twisted heterotrilayer, enabling highly localized moiré excitons at the interface. The confinement effect of moiré potential on moiré excitons is further demonstrated by changes in temperature, laser power, and valley polarization. Our findings offer a new approach for localizing moiré excitons in twist-angle heterostructures, which has the potential for the development of coherent quantum light emitters.
Localized moiré excitons were found in twisted heterotrilayer superlattices, with the moiré potential depth tunable through layer degrees of freedom. This discovery benefits quantum light emitter development.
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1 Central South University, School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Changsha, China (GRID:grid.216417.7) (ISNI:0000 0001 0379 7164); Central South University, State Key Laboratory of High-Performance Complex Manufacturing, Changsha, China (GRID:grid.216417.7) (ISNI:0000 0001 0379 7164)
2 Central South University, School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Changsha, China (GRID:grid.216417.7) (ISNI:0000 0001 0379 7164)
3 The University of Sydney, School of Chemical and Biomolecular Engineering, Sydney, Australia (GRID:grid.1013.3) (ISNI:0000 0004 1936 834X); The University of Sydney Nano Institute, The University of Sydney, Sydney, Australia (GRID:grid.1013.3) (ISNI:0000 0004 1936 834X)
4 Chinese Academy of Sciences, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Beijing, China (GRID:grid.9227.e) (ISNI:0000000119573309); University of Chinese Academy of Sciences, School of Physical Sciences, Beijing, China (GRID:grid.410726.6) (ISNI:0000 0004 1797 8419); Songshan Lake Materials Laboratory, Dongguan, China (GRID:grid.511002.7)
5 Hunan University, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Changsha, China (GRID:grid.67293.39)
6 Central South University, School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Changsha, China (GRID:grid.216417.7) (ISNI:0000 0001 0379 7164); Central South University, State Key Laboratory of High-Performance Complex Manufacturing, Changsha, China (GRID:grid.216417.7) (ISNI:0000 0001 0379 7164); Shenzhen Research Institute of Central South University, Shenzhen, China (GRID:grid.216417.7)