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Abstract
Nanostructured forms of stoichiometric In2O3 are proving to be efficacious catalysts for the gas-phase hydrogenation of CO2. These conversions can be facilitated using either heat or light; however, until now, the limited optical absorption intensity evidenced by the pale-yellow color of In2O3 has prevented the use of both together. To take advantage of the heat and light content of solar energy, it would be advantageous to make indium oxide black. Herein, we present a synthetic route to tune the color of In2O3 to pitch black by controlling its degree of non-stoichiometry. Black indium oxide comprises amorphous non-stoichiometric domains of In2O3-x on a core of crystalline stoichiometric In2O3, and has 100% selectivity towards the hydrogenation of CO2 to CO with a turnover frequency of 2.44 s−1.
The utilization of white-colored, wide-bandgap CO2 hydrogenation photocatalysts has been hindered by their limited light-harvesting ability. By making stoichiometric white indium oxide non-stoichiometric and black, it is transformed from a highly inactive to a highly active photothermal catalyst.
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1 The Chinese University of Hong Kong, Shenzhen, School of Science and Engineering, Shenzhen, China (GRID:grid.511521.3); University of Toronto, Solar Fuels Group, Department of Chemistry, Toronto, Canada (GRID:grid.17063.33) (ISNI:0000 0001 2157 2938)
2 University of Toronto, Solar Fuels Group, Department of Chemistry, Toronto, Canada (GRID:grid.17063.33) (ISNI:0000 0001 2157 2938)
3 Qufu Normal University, College of Chemistry and Chemical Engineering, Qufu, China (GRID:grid.412638.a) (ISNI:0000 0001 0227 8151)
4 Tianjin University, Center for Joint Quantum Studies and Department of Physics, Institute of Science, Tianjin, China (GRID:grid.33763.32) (ISNI:0000 0004 1761 2484)
5 Argonne National Laboratory, CLS@APS, Advanced Photon Source, Lemont, USA (GRID:grid.187073.a) (ISNI:0000 0001 1939 4845); Canadian Light Source Inc., Saskatoon, Canada (GRID:grid.423571.6) (ISNI:0000 0004 0443 7584)
6 University of Toronto, Department of Electrical and Computer Engineering, Toronto, Canada (GRID:grid.17063.33) (ISNI:0000 0001 2157 2938)
7 University of Toronto, Department of Materials Science and Engineering, Toronto, Canada (GRID:grid.17063.33) (ISNI:0000 0001 2157 2938)
8 Zhejiang University, State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Hangzhou, China (GRID:grid.13402.34) (ISNI:0000 0004 1759 700X)
9 University of Toronto, Department of Electrical and Computer Engineering, Toronto, Canada (GRID:grid.17063.33) (ISNI:0000 0001 2157 2938); University of Toronto, Department of Materials Science and Engineering, Toronto, Canada (GRID:grid.17063.33) (ISNI:0000 0001 2157 2938)