It appears you don't have support to open PDFs in this web browser. To view this file, Open with your PDF reader
Abstract
ZnS quantum dots (QDs) were fabricated using the co-precipitation technique with no capping agent. The effects of different annealing temperatures (non-annealed, 240 °C and 340 °C for 2 h) on the structural and optical characteristics of ZnS QDs are reported. The samples were examined by XRD, TEM, PL, FTIR, and UV–Vis. An increase in annealing temperature led to an increase in the dot size and a lowering of the energy band gap (EG). The average crystallite size, D of ZnS was between 4.4 and 5.6 nm. The ZnS QDs showed a band gap of 3.75, 3.74 and 3.72 eV for non-annealed, 240 °C, and 340 °C annealed samples. The reflection spectra increased in the visible light and decreased in UV region with an increase in annealing temperature. This work showed that the band gap and size of ZnS QDs could be tuned by varying the annealing temperature.
You have requested "on-the-fly" machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Show full disclaimer
Neither ProQuest nor its licensors make any representations or warranties with respect to the translations. The translations are automatically generated "AS IS" and "AS AVAILABLE" and are not retained in our systems. PROQUEST AND ITS LICENSORS SPECIFICALLY DISCLAIM ANY AND ALL EXPRESS OR IMPLIED WARRANTIES, INCLUDING WITHOUT LIMITATION, ANY WARRANTIES FOR AVAILABILITY, ACCURACY, TIMELINESS, COMPLETENESS, NON-INFRINGMENT, MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE. Your use of the translations is subject to all use restrictions contained in your Electronic Products License Agreement and by using the translation functionality you agree to forgo any and all claims against ProQuest or its licensors for your use of the translation functionality and any output derived there from. Hide full disclaimer
Details
1 Ibb University, Physics Department, Faculty of Science, Ibb, Yemen (GRID:grid.444909.4); Ain Shams University, Laboratory of Materials Sciences and Solar Cells, Physics Department, Faculty of Science, Abbasia, Egypt (GRID:grid.7269.a) (ISNI:0000 0004 0621 1570)
2 Ain Shams University, Laboratory of Materials Sciences and Solar Cells, Physics Department, Faculty of Science, Abbasia, Egypt (GRID:grid.7269.a) (ISNI:0000 0004 0621 1570)
3 Ibb University, Physics Department, Faculty of Science, Ibb, Yemen (GRID:grid.444909.4); Aljanad University for Science and Technology, Engineering College, Taiz, Yemen (GRID:grid.444909.4)
4 Ibb University, Physics Department, Faculty of Science, Ibb, Yemen (GRID:grid.444909.4)
5 Thamar University, Physics Department, Thamar, Yemen (GRID:grid.444928.7) (ISNI:0000 0000 9908 6529); American University in Cairo, Department of Physics, School of Sciences and Engineering, New Cairo, Egypt (GRID:grid.252119.c) (ISNI:0000 0004 0513 1456)
6 American University in Cairo, Department of Physics, School of Sciences and Engineering, New Cairo, Egypt (GRID:grid.252119.c) (ISNI:0000 0004 0513 1456)
7 FMIPA, Universitas Sumatera Utara, Post Graduate Program (Physics), Medan, Indonesia (GRID:grid.413127.2) (ISNI:0000 0001 0657 4011)
8 Universiti Kebangsaan Malaysia, Department of Applied Physics, Bangi, Malaysia (GRID:grid.412113.4) (ISNI:0000 0004 1937 1557)