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© 2023 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.

Abstract

A flower-like ZnO was successfully synthesized via a simple chemical precipitation method at room temperature (RT) in distilled water, without the use of any catalysts or substrates. The sample’s structure was analyzed using various techniques including scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (FETEM), and X-ray photoelectron spectroscopy (XPS), which confirmed its hexagonal structure. UV–visible optical absorption measurements also revealed the presence of UV absorption at 365 nm. A reasonable growth mechanism for the formation of flower-like ZnO was proposed based on these analyses. The response of the sample to low concentrations of NO2 (1 ppm) was evaluated at different calcination temperatures, and the results showed that the best response was achieved when the sample was calcined at 600 °C. The flower-like ZnO sample labeled as 6ZnO showed the highest response of 54.18 when exposed to 1 ppm of NO2 gas at RT. Additionally, 6ZnO exhibited good response and recovery properties of 11 s and 93 s, respectively, at low concentrations of NO2 at 1 ppm. The gas sensing mechanism and the mechanism of the enhanced gas response of the flower-like ZnO are discussed.

Details

Title
Synthesis of Flower-like ZnO and Its Enhanced Sensitivity towards NO2 Gas Detection at Room Temperature
Author
Cai, Zhicheng 1   VIAFID ORCID Logo  ; Park, Jiho 2 ; Park, Sunghoon 3   VIAFID ORCID Logo 

 Department of Software Convergence, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea; [email protected] 
 Department of Electronics and Information Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea; [email protected] 
 Department of Intelligent and Mechatronics Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea; Department of Semiconductor System Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea 
First page
322
Publication year
2023
Publication date
2023
Publisher
MDPI AG
e-ISSN
22279040
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2829781089
Copyright
© 2023 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.