Abstract

Semiconductors processed at low temperature for complementary metal–oxide semiconductors (CMOS) devices are receiving considerable attention in the field of integrated electronic applications. In this work, we demonstrated a CMOS inverter constructed by n-type ZnON and p-type Te TFTs where all the processes have been done at low temperature. The electrical measurements of proposed TFTs exhibit high mobility (> 100 and > 3 cm2/Vs in case of ZnON and Te TFTs, respectively) and a stable on/off current ratio. The resulted CMOS inverter exhibits a high voltage swing and a high voltage gain of 15.89. Since all the synthesis and fabrication processes are performed at low temperatures with easy processing techniques, the results may open new opportunities in the field of integrated electronics field.

Details

Title
Low temperature processed, highly stable CMOS inverter by integrating Zn-ON and tellurium thin-film transistors
Author
Naqi, Muhammad 1 ; Jang, Seong Cheol 2 ; Cho, Yongin 1 ; Park, Ji Min 2 ; Oh, Joo On 1 ; Rho, Hyun Yeol 1 ; Hyun-Suk, Kim 2 ; Kim, Sunkook 2 

1  School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Republic of Korea 
2  Department of Materials Science and Engineering, Chungnam National University, Daejeon, Republic of Korea 
Pages
199-204
Publication year
2023
Publication date
Sep 2023
Publisher
Taylor & Francis Ltd.
ISSN
15980316
e-ISSN
21581606
Source type
Scholarly Journal
Language of publication
English
DOI
https://doi.org/10.1080/15980316.2023.2174195
ProQuest document ID
2831678147
Copyright
© 2023 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group on behalf of the Korean Information Display Society. This work is licensed under the Creative Commons Attribution License http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.